Substrate temperature effects on ({radical}3 {times} radical}3) R30{degree} domain growth of Ag on Si (111) surface
High-resolution LEED angular profiles associated with ({radical}3 {times} {radical}3)R30{degree} domain growth of Ag on Si(111) have been analyzed following Ag deposition as a function of substrate temperature. We found that the {radical}3 domain size distribution has the same Gamma distribution at different coverages and substrate temperatures. However, at higher substrate temperatures the {radical}3 structure grows with coverage primarily by domain coalescence as indicated by the considerable increase in the mean and width of the size distribution. As a result, scaling, i.e. self-similar domain growth, is observed. At lower substrate temperatures the {radical}3 structure grows with coverage by simply increasing the number of small, randomly nucleated domains. Hence, the domain size distribution at low temperatures is narrow and varies little with coverage. 18 refs., 3 figs.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- Sponsoring Organization:
- DOE/ER
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6884567
- Report Number(s):
- CONF-900830-1; ON: DE90016527
- Country of Publication:
- United States
- Language:
- English
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