Scaling of the ( radical 3 times radical 3 ) R 30 degree domain-size distribution with coverage for Ag/Si(111)
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6024 (US)
The evolution of the ({radical}3 {times} {radical}3 ){ital R}30{degree} domain-size distribution with coverage for Ag on Si(111) has been studied by high-resolution low-energy electron diffraction. Scaling of the size distribution, which can be fitted by a gamma distribution, is observed. A temperature dependence of the exponent {ital n} describing a power growth law for mean size versus coverage is found where {ital n} decreases with decreasing deposition temperature. By introducing a simple relation, {ital q}+{ital nd}=1, where the dimensionality {ital d}=2 and {ital q} is an exponent describing the power law for domain density versus coverage, the behavior of {ital n} is explained in terms of the experimentally observed behavior of {ital q}.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 5814611
- Journal Information:
- Physical Review Letters; (USA), Journal Name: Physical Review Letters; (USA) Vol. 66:17; ISSN PRLTA; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360102* -- Metals & Alloys-- Structure & Phase Studies
COHERENT SCATTERING
COVERINGS
CRITICAL TEMPERATURE
CRYSTAL GROWTH
DATA
DIFFRACTION
ELECTRON DIFFRACTION
ELEMENTS
EXPERIMENTAL DATA
FILMS
INFORMATION
METALS
NUMERICAL DATA
PARTICLE SIZE
PHYSICAL PROPERTIES
RESOLUTION
SCALING LAWS
SCATTERING
SEMIMETALS
SILICON
SILVER
SIZE
TEMPERATURE DEPENDENCE
THERMODYNAMIC PROPERTIES
THIN FILMS
TRANSITION ELEMENTS
TRANSITION TEMPERATURE