Defect and impurity effects on the initial growth of Ag on Si(111)
Conference
·
OSTI ID:6458311
Step and impurity effects on the initial growth of a thin film have been demonstrated in the ({radical}3 {times} {radical}3)R30{degree} domain growth of Ag on Si(111) using high angular resolution LEED. Anisotropy in the {radical}3 domain shape and growth during deposition are found on the stepped Si(111) with the preferential growth along the step edge direction. The {radical}3 superlattice grows with coverage principally by domain coalescence at the temperature T {approximately} 450{degree}C and is self-similar at different coverages (scaling) as observed on a flat Si(111). The size distribution is shown to follow a Gamma distribution by a simple model calculation. A dramatic change in the growth mechanism is observed when oxygen impurities ({le}0.02 ML) appear. The {radical}3 domains in the presence of impurities grow with coverage more randomly and isotropically in contrast with the step edge effects and coalescence is inhibited. As a result, the {radical}3 superlattice stays in a microdomain morphology without long range order. 17 refs., 6 figs.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- Sponsoring Organization:
- DOE/ER
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6458311
- Report Number(s):
- CONF-901035-8; ON: DE91001277
- Country of Publication:
- United States
- Language:
- English
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