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Defect and impurity effects on the initial growth of Ag on Si(111)

Conference ·
OSTI ID:6458311
Step and impurity effects on the initial growth of a thin film have been demonstrated in the ({radical}3 {times} {radical}3)R30{degree} domain growth of Ag on Si(111) using high angular resolution LEED. Anisotropy in the {radical}3 domain shape and growth during deposition are found on the stepped Si(111) with the preferential growth along the step edge direction. The {radical}3 superlattice grows with coverage principally by domain coalescence at the temperature T {approximately} 450{degree}C and is self-similar at different coverages (scaling) as observed on a flat Si(111). The size distribution is shown to follow a Gamma distribution by a simple model calculation. A dramatic change in the growth mechanism is observed when oxygen impurities ({le}0.02 ML) appear. The {radical}3 domains in the presence of impurities grow with coverage more randomly and isotropically in contrast with the step edge effects and coalescence is inhibited. As a result, the {radical}3 superlattice stays in a microdomain morphology without long range order. 17 refs., 6 figs.
Research Organization:
Oak Ridge National Lab., TN (USA)
Sponsoring Organization:
DOE/ER
DOE Contract Number:
AC05-84OR21400
OSTI ID:
6458311
Report Number(s):
CONF-901035-8; ON: DE91001277
Country of Publication:
United States
Language:
English

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