Defect and impurity effects on the initial growth of Ag on Si(111)
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (US)
Step and impurity effects on the initial growth of a thin film have been demonstrated in the ( 7/8 {times} 7/8 ){ital R}30{degree} (or simply 7/8 ) domain growth of Ag on Si(111) using high angular resolution low-energy electron diffraction. Anisotropy in the 7/8 domain shape and growth during deposition are found on the stepped Si(111) with the preferential growth along the step edge direction. The 7/8 superlattice grows with coverage principally by domain coalescence at the temperature {ital T}{similar to}450 {degree}C and is self-similar at different coverages (scaling) as observed on a flat Si(111). The size distribution is shown to follow a Gamma distribution by a simple model calculation. A dramatic change in the growth mechanism is observed when oxygen impurities ({le}0.02 monolayer) appear. The 7/8 domains in the presence of impurities grow with coverage more randomly and isotropically in contrast with the step edge effects and coalescence is inhibited. As a result, the 7/8 superlattice stays in a microdomain morphology without long range order.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 5690391
- Journal Information:
- Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 9:3; ISSN JVTAD; ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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