Interfacially initiated crystallization in amorphous germanium films

Journal Article · Mon Mar 09 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98091· OSTI ID:6883060

Homma, H; Schuller, I K; Sevenhans, W; Bruynseraede, Y

The amorphous to microcrystalline phase transition of Ge in Pb/Ge multilayers has been extensively studied. During crystallization, the x-ray diffraction peaks of the modulated structure disappear and the Pb texture improves. It is shown that the crystallization temperature decreases with decreasing amorphous Ge thickness and is strongly affected by the texture of the metallic component. These results imply that the crystallization is interfacially initiated.

• Research Organization: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 6883060
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
COHERENT SCATTERING
CRYSTAL STRUCTURE
CRYSTALLIZATION
DIFFRACTION
DIMENSIONS
ELEMENTS
GERMANIUM
LAYERS
LEAD
METALS
MICROSTRUCTURE
PHASE TRANSFORMATIONS
SCATTERING
TEXTURE
THICKNESS
X-RAY DIFFRACTION