Crystallization and melting in metal-semiconductor multilayers

Journal Article · Thu Sep 01 04:00:00 EDT 1988 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.38.4974· OSTI ID:6800987

Sevenhans, W; Locquet, J P; Bruynseraede, Y; Homma, H; Schuller, I K

The amorphous-to-microcrystalline phase transition of Ge in Pb/Ge multilayer geometry has been investigated as a function of layer thicknesses with the use of high-temperature x-ray diffraction techniques. During crystallization, the modulation structure is destroyed and the Pb texture improves. In addition, the crystallization temperature decreases with decreasing amorphous Ge thickness and increases with decreasing thickness of the metallic component. The results imply that the crystallization is interfacially initiated and possibly affected by electron transfer. A study of two-dimensional melting for Pb in this system was attempted unsuccessfully because the layered structure was destroyed by the crystallization that occurs substantially below the melting temperature.

• Research Organization: Laboratorium voor Vaste Stof-Fysika en Magnetisme, Departement Natuurkunde, Katholieke Universiteit Leuven, B-3030 Leuven, Belgium
• OSTI ID: 6800987
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 38:7; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
AMORPHOUS STATE
COHERENT SCATTERING
CRYSTALLIZATION
DIFFRACTION
ELEMENTS
GERMANIUM
HETEROJUNCTIONS
JUNCTIONS
LAYERS
LEAD
MATERIALS
MELTING
METALS
PHASE TRANSFORMATIONS
SCATTERING
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
X-RAY DIFFRACTION