Emitter current suppression in a high-low-junction emitter solar cell using an oxide-charge-induced electron accumulation layer

Journal Article · Sat Jul 15 04:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90295· OSTI ID:6882456

Neugroschel, A; Lindholm, F A; Pao, S C; Fossum, J G

A new type of high-low-junction emitter silicon solar cell employing an oxide-charge-induced electron accumulation layer demonstrates complete suppression of the dark emitter recombination current J/sub E/ to values so low that the base recombination current dominates in determining the open-circuit voltage V/sub OC/. This suppression of J/sub E/ results in measured values of V/sub OC/ considerably larger than those previously reported for n-on-p silicon solar cells. This ability to suppress J/sub E/ leads to projections of efficiency of about 18% AM0 and about 20% AM1 for this oxide-charge-induced high-low-junction emitter (OCI-HLE) solar cell.

• Research Organization: Electrical Engineering Department, University of Florida, Gainesville, Flordia 32611
• OSTI ID: 6882456
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CONVERSION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
ENERGY CONVERSION
EPITAXY
FABRICATION
JUNCTION DIODES
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
SOLAR CELLS
SOLAR ENERGY CONVERSION