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Mos-oxide charge induced junction solar cells

Conference · · Alternative Energy Sources; (United States)
OSTI ID:6393863
It has been established in literature that MOS-Inversion Layer Solar Cells have characteristically better performance than conventional diffused junction solar cells, due to its shallow oxide charge induced junction, having very high collection efficiency because of the large electric field existing in the n-induced region; nature of the Si-SiO/sub 2/ interface where surface recombination velocity is extremely low; and the near ideal nature of the junction as compared to diffused junction solar cells where damage occurs with the advancement of the diffused metallurgical junction. A great deal of technological improvements have been done to increase the short circuit current density, to almost its theoretical limit. However, a substantial amount of research is still on to improve the open circuit voltage, V /SUB OC/ to its theoretical maximum value. In diffused junction solar cells, Voc is largely limited by the recombination current component due to the emitter, caused by defects, areal and spatial inhomogeneity and process induced nonlinearities in the n-diffused region. Oxide charge induced junction solar cells are the result of many technological improvements and are still in the development stage. These solar cells are free of degrading effects, such as present in the diffused junction solar cells. Extremely efficient and highly stable structures have been reported and are possible using oxide charge induced junctions. The present paper describes MOS-Oxide Charge induced Junction solar cells from a fundamental point of view. Basic theory of these structures is presented along with many possible and viable structures. A discussion concerning the advantages and disadvantages concludes the paper.
Research Organization:
National Physical Laboratory, New Delhi
OSTI ID:
6393863
Report Number(s):
CONF-831205-
Conference Information:
Journal Name: Alternative Energy Sources; (United States)
Country of Publication:
United States
Language:
English