Studies of silicon pn junction solar cells. Final technical report

Technical Report · Thu Sep 01 04:00:00 EDT 1977

OSTI ID:5558944

Lindholm, F A; Neugroschel, A

Modifications of the basic Shockley equations that result from the random and nonrandom spatial variations of the chemical composition of a semiconductor were developed. These modifications underlie the existence of the extensive emitter recombination current that limits the voltage over the open circuit of solar cells. The measurement of parameters, series resistance and the base diffusion length is discussed. Two methods are presented for establishing the energy bandgap narrowing in the heavily-doped emitter region. Corrections that can be important in the application of one of these methods to small test cells are examined. Oxide-charge-induced high-low-junction emitter (OCI-HLE) test cells which exhibit considerably higher voltage over the open circuit than was previously seen in n-on-p solar cells are described.

• Research Organization: Florida Univ., Gainesville (USA). Dept. of Electrical Engineering
• OSTI ID: 5558944
• Report Number(s): N-79-19458
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
DIFFUSION LENGTH
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ENERGY GAP
EQUIPMENT
JUNCTIONS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT