Characterization and optimization of silicon solar cells

Thesis/Dissertation · Sat Jan 01 04:00:00 EST 1983

OSTI ID:6781434

Han, M K

The characteristics of crystalline silicon p-n junction solar cells were studied by numerical modeling of the fundamental semiconductor device equations. This analysis includes all the known physical mechanisms in silicon devices and empirical data of properties of silicon. The limiting mechanisms of silicon solar cells have been quantitatively identified, and the effect of emitter region properties and base doping density on the effect of emitter region properties and base doping density on the performance of solar cells have been analyzed. It is shown that bandgap narrowing and surface recombination are the most important limiting factors. Solar cell efficiencies as a function of base doping density are calculated. The maximum open circuit voltage of silicon solar cells may not exceed 620 mV, while the potential open circuit voltage can reach 680 mV by reducing the surface recombination velocity. The optimum device structure was found systematically by minimizing limiting factors and 18% efficiency cell was realized.

• OSTI ID: 6781434
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
DIRECT ENERGY CONVERTERS
ELEMENTS
ENERGY GAP
EQUIPMENT
OPTIMIZATION
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT