Near-surface electronic structure on InAs(100) modified with self-assembled monolayers of alkanethiols
- Department of Chemistry and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
- Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
- Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185 (United States)
Surface chemical modification is used to eliminate the problem of high surface recombination velocity and control surface band bending on InAs(100). Alkanethiols, RSH; R=CH{sub 3}(CH{sub 2}){sub n}, both neat and in ethanolic solutions, are used to passivate this surface against oxidation, as characterized by Raman scattering and x-ray photoelectron spectroscopy of the adsorbate-covered and bare surfaces. The magnitude of the interfacial band bending is obtained by analysis of Raman scattering from the unscreened longitudinal optical phonon, which arises from the near-surface charge accumulation region. Removing the native oxide with a Br{sub 2}:CH{sub 3}OH chemomechanical etch reduces the surface band bending, but atmospheric oxidation increases band bending to its original level over several hours. In contrast, alkanethiol passivation of InAs(100) prevents band bending for periods of up to several weeks. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 687979
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 75; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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