Ion-etch produced damage on InAs(100) studied through collective-mode electronic Raman scattering
- Department of Chemistry and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 600 S. Mathews Avenue, Urbana, Illinois 61801 (United States)
- Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1110 W. Green Street, Urbana, Illinois 61801 (United States)
Raman scattering and x-ray photoelectron spectroscopy are used to study the damage induced by low energy Ar{sup +} milling on InAs(100) surfaces. Evidence for etch-induced lattice damage is obtained even under the mildest conditions employed. Etching at 75 V creates an In-rich surface and reduces the intensity of scattering from the unscreened longitudinal optic (LO) phonon in the near-surface region. Etching at higher voltages creates damage states that increase the carrier concentration at depths at least as large as the Raman probe depth ({approx}100 Aa). Postetch annealing at 500 degree sign C in ultrahigh vacuum restores the LO phonon mode to its original intensity, the carrier concentration to original levels, and a stoichiometric (In:As=1:1) surface composition. Etch-induced lattice damage in the near-surface region, which is subsequently removed by annealing at optimal temperatures, is the only mechanism consistent with all the inelastic light scattering and composition results. (c) 2000 American Vacuum Society.
- OSTI ID:
- 20215306
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 1 Vol. 18; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
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