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Selective Suppression of Carrier-Driven Photochemical Etching: Raman Spectroscopy as a Diagnostic Tool

Conference · · Materials Research Society Symposia Proceedings
DOI:https://doi.org/10.1557/proc-201-581· OSTI ID:6260579
 [1];  [1];  [1];  [1];  [1]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
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Carrier-driven photochemical etching of semiconductors can be selectively suppressed by altering the near-surface region to enhance carrier recombination, thereby reducing the supply of carriers that drive the surface etching reaction. Two methods for enhancing recombination and decreasing the etch rate at a given phonon flux include ion implantation and localized Zn diffusion. Raman spectroscopy can be employed to determine whether sufficient alteration of electronic properties has occurred to suppress etching. Carrier-driven photochemical reactions, which require direct participation of free carriers for the chemical reaction to proceed, can be selectively suppressed by increasing the minority carrier recombination rate, thereby reducing the supply of carriers that drive the surface etching reaction. Two methods for enhancing recombination and decreasing the etching quantum yield, which is the number of atoms removed per incident photon, include ion implantation and localized Zn diffusion. For ion implantation, recombination-promoting defect concentrations depend on ion species, fluence, and annealing both during and after the implantation process. Other recombination processes related to carrier scattering from ionized impurities from in-diffusion of dopants or following implant activation can control etching. Raman spectroscopy can be employed to detect changes in electronic properties that correlate with etching suppression. Changes that occur in the LO-phonon lineshape, such as those associated with phonon confinement and ionized impurity scattering, can be diagnostic of the carrier-driven etching behavior following a specific treatment. We have demonstrated two applications of Raman spectroscopy as a diagnostic for suppression of the carrier-driven photochemical etching of GaAs.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6260579
Report Number(s):
SAND--90-1740C; CONF-901105--91; ON: DE91007495
Journal Information:
Materials Research Society Symposia Proceedings, Journal Name: Materials Research Society Symposia Proceedings Vol. 201; ISSN 0272-9172
Publisher:
Springer Nature
Country of Publication:
United States
Language:
English

References (9)

The preparation and characterization of strained-layer superlattices in the GaAs + GaP System journal September 1983
Application of thin silicon films to closed-tube Si and Zn diffusion in GaAs and AlxGa1−xAs journal June 1988
Selective suppression of photochemical dry etching using elevated surface impurity concentrations: A new technique for self-aligned etching journal September 1990
The Electrical Effects of Radiation Damage Near the Interface of Schottky Barrier Contacts book January 1977
The Displacement of Atoms in Solids by Radiation journal January 1955
Effects of As + ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation journal January 1984
Selective Ion Bombardment for the Control of Laser‐Induced Photochemical Dry Etching of Semiconductors journal March 1989
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV journal January 1983
Raman scattering by coupled LO-phonon—plasmon modes and forbidden TO-phonon Raman scattering in heavily doped p -type GaAs journal December 1981

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Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400500 -- Photochemistry
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
CHEMICAL REACTIONS
DIFFUSION
ELEMENTS
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION IMPLANTATION
LASER SPECTROSCOPY
MATERIALS
METALS
N-TYPE CONDUCTORS
PNICTIDES
RAMAN SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SURFACE FINISHING
ZINC