Ridge waveguide injection laser with a GaInAs strained-layer quantum well (lambda = 1. mu. m)
Ridge waveguide lasers emitting near 1 ..mu..m have been made on a GaAs substrate using a single GaInAs strained-layer quantum well in a GaAs/AlGaAs graded-index separate confinement heterostructure. The epitaxial layers were grown by low-pressure metalorganic chemical vapor deposition, and the ridge waveguide was fabricated by chemically assisted ion beam etching. The lasers have threshold currents near 17 mA with fundamental lateral mode operation to five times this value. These are the first reported strained-layer current-injection lasers to run cw at room temperature; they operate, without bonding, to greater than 24 mW/facet (100 mA dc), and have 18 mW/facet (80 mA dc) lifetimes in excess of 144 h.
- Research Organization:
- School of Electrical Engineering and Field of Applied Physics, Cornell University, Ithaca, New York 14853
- OSTI ID:
- 6875665
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 50:12
- Country of Publication:
- United States
- Language:
- English
Similar Records
Low threshold current AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure distributed-feedback lasers grown by metalorganic chemical vapor deposition
Cavity length and doping dependence of 1. 5. mu. m GaInAs/GaInAsP multiple quantum well laser characteristics
Related Subjects
SEMICONDUCTOR LASERS
FABRICATION
OPERATION
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
ETCHING
EXPERIMENTAL DATA
GALLIUM ARSENIDES
HETEROJUNCTIONS
INFRARED RADIATION
LIFETIME
ORGANOMETALLIC COMPOUNDS
THRESHOLD CURRENT
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DATA
DEPOSITION
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
ORGANIC COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SURFACE COATING
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)