A radiation hardened SONOS/CMOS EEPROM family

Conference · Mon Jan 01 00:00:00 EST 1990

OSTI ID:6871351

Klein, V F; Wood, G M; Buller, J F ^[1]; Murray, J R; Rodriquez, J L ^[2]

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1. Harris Corp., Melbourne, FL (USA). Semiconductor Sector
2. Sandia National Labs., Albuquerque, NM (USA)

There has long been a need for fast read nonvolatile, rad hard memories for military and space applications. Recent advances in EEPROM technology now allow this need to be met for many applications. Harris/Sandia have developed a 16k and a 256k rad hard EEPROM. The EEPROMs utilize a Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) memory transistor integrated into a 2 {mu}m, rad hard two level metal CMOS process. Both the 16k and the 256k parts have been designed to interface with the Intel 8085 or 80C51 and National 32000 series microprocessors and feature page and block clear modes. Both parts are functionally identical, and are produced by the same fabrication process. They are also pin for pin compatible with each other, except for the extra address and ground pins on the 256k. This paper describes the characteristics of this EEPROM family. 1 ref.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6871351
• Report Number(s): SAND-90-2173C; CONF-901124-2; ON: DE90015993
• Resource Relation: Conference: Government microcircuit applications conference: technology strategies for the 90's, Las Vegas, NV (USA), 6-8 Nov 1990
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
TRANSISTORS
RADIATION HARDENING
INTEGRATED CIRCUITS
PHYSICAL RADIATION EFFECTS
ELECTRONIC CIRCUITS
HARDENING
MICROELECTRONIC CIRCUITS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems