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Title: 2K nonvolatile shadow RAM and 265K EEPROM SONOS nonvolatile memory development

Abstract

This paper describes Silicon Oxide Nitride Oxide Semiconductor (SONOS) nonvolatile memory development at Sandia National Laboratories. A 256K EEPROM nonvolatile memory and a 2K nonvolatile shadow RAM are under development using an n-channel SONOS memory technology. The technology has 1.2 {micro}m minimum features in a twin well design using shallow trench isolation.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
629453
Report Number(s):
SAND-98-1640C; CONF-980674-
ON: DE98003974; TRN: AHC29812%%116
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: IEEE 1998 international nonvolatile memory technology conference, Albuquerque, NM (United States), 22-24 Jun 1998; Other Information: PBD: [1998]
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; 99 MATHEMATICS, COMPUTERS, INFORMATION SCIENCE, MANAGEMENT, LAW, MISCELLANEOUS; INTEGRATED CIRCUITS; SEMICONDUCTOR STORAGE DEVICES; DESIGN; OPERATION; PROGRAMMING

Citation Formats

Nasby, R D, Murray, J R, Habermehl, S D, Bennett, R S, Tafoya-Porras, B C, Mahl, P R, Rodriguez, J L, Jones, R V, and Knoll, M G. 2K nonvolatile shadow RAM and 265K EEPROM SONOS nonvolatile memory development. United States: N. p., 1998. Web.
Nasby, R D, Murray, J R, Habermehl, S D, Bennett, R S, Tafoya-Porras, B C, Mahl, P R, Rodriguez, J L, Jones, R V, & Knoll, M G. 2K nonvolatile shadow RAM and 265K EEPROM SONOS nonvolatile memory development. United States.
Nasby, R D, Murray, J R, Habermehl, S D, Bennett, R S, Tafoya-Porras, B C, Mahl, P R, Rodriguez, J L, Jones, R V, and Knoll, M G. Wed . "2K nonvolatile shadow RAM and 265K EEPROM SONOS nonvolatile memory development". United States. https://www.osti.gov/servlets/purl/629453.
@article{osti_629453,
title = {2K nonvolatile shadow RAM and 265K EEPROM SONOS nonvolatile memory development},
author = {Nasby, R D and Murray, J R and Habermehl, S D and Bennett, R S and Tafoya-Porras, B C and Mahl, P R and Rodriguez, J L and Jones, R V and Knoll, M G},
abstractNote = {This paper describes Silicon Oxide Nitride Oxide Semiconductor (SONOS) nonvolatile memory development at Sandia National Laboratories. A 256K EEPROM nonvolatile memory and a 2K nonvolatile shadow RAM are under development using an n-channel SONOS memory technology. The technology has 1.2 {micro}m minimum features in a twin well design using shallow trench isolation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {7}
}

Conference:
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