2K nonvolatile shadow RAM and 265K EEPROM SONOS nonvolatile memory development
Conference
·
OSTI ID:629453
This paper describes Silicon Oxide Nitride Oxide Semiconductor (SONOS) nonvolatile memory development at Sandia National Laboratories. A 256K EEPROM nonvolatile memory and a 2K nonvolatile shadow RAM are under development using an n-channel SONOS memory technology. The technology has 1.2 {micro}m minimum features in a twin well design using shallow trench isolation.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 629453
- Report Number(s):
- SAND--98-1640C; CONF-980674--; ON: DE98003974
- Country of Publication:
- United States
- Language:
- English
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