A radiation hardened SONOS/CMOS EEPROM family
- Harris Corp., Melbourne, FL (USA). Semiconductor Sector
- Sandia National Labs., Albuquerque, NM (USA)
There has long been a need for fast read nonvolatile, rad hard memories for military and space applications. Recent advances in EEPROM technology now allow this need to be met for many applications. Harris/Sandia have developed a 16k and a 256k rad hard EEPROM. The EEPROMs utilize a Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) memory transistor integrated into a 2 {mu}m, rad hard two level metal CMOS process. Both the 16k and the 256k parts have been designed to interface with the Intel 8085 or 80C51 and National 32000 series microprocessors and feature page and block clear modes. Both parts are functionally identical, and are produced by the same fabrication process. They are also pin for pin compatible with each other, except for the extra address and ground pins on the 256k. This paper describes the characteristics of this EEPROM family. 1 ref.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- Sponsoring Organization:
- DOE/DP
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6871351
- Report Number(s):
- SAND-90-2173C; CONF-901124--2; ON: DE90015993
- Country of Publication:
- United States
- Language:
- English
Similar Records
Design considerations for a radiation hardened nonvolatile memory
Design considerations for a radiation hardened nonvolatile memory
Related Subjects
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSISTORS