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Radiation hardness of Mo/Si multilayers designed for use in a soft x- ray projection lithography system

Conference ·
OSTI ID:6856465

A molybdenum silicon multilayer was irradiated with 13.4 nm radiation to investigate changes in multilayer performance under simulated Soft X-ray Projection Lithography (SXPL) conditions. The wiggler/undulator at the Berlin electron storage ring BESSY was used as a quasi-monochromatic source of calculable spectral radiant intensity and was configured to simulate an incident SXPL x-ray spectrum. The test multilayer received a radiant exposure of 240 J/mm[sup 2] in an exposure lasting 8.9 hours. The corresponding average incident power density was 7.5 mW/mm[sup 2]. The absorbed dose of 7.8 [times] 10[sup 10] J/kg (7.8 [times] 10[sup 12] rd) is equivalent to 1.2 times the dose that would be absorbed by a multilayer coating on the first imaging optic in a hypothetical SXPL system during one year of operation. Surface temperature increases did not exceed 2[degrees]C during the exposure. Normal incidence reflectance measurements at [lambda][sub 0]=13.4 nm performed prior to radiation exposure were in agreement with measurements performed after the exposure, indicating that no significant damage had occurred.

Research Organization:
Lawrence Livermore National Lab., CA (United States)
Sponsoring Organization:
DOE; USDOE, Washington, DC (United States)
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
6856465
Report Number(s):
UCRL-JC-111725; CONF-9204120--6; ON: DE93011879
Country of Publication:
United States
Language:
English