Radiation hardness of Mo/Si multilayers designed for use in a soft x- ray projection lithography system
A molybdenum silicon multilayer was irradiated with 13.4 nm radiation to investigate changes in multilayer performance under simulated Soft X-ray Projection Lithography (SXPL) conditions. The wiggler/undulator at the Berlin electron storage ring BESSY was used as a quasi-monochromatic source of calculable spectral radiant intensity and was configured to simulate an incident SXPL x-ray spectrum. The test multilayer received a radiant exposure of 240 J/mm[sup 2] in an exposure lasting 8.9 hours. The corresponding average incident power density was 7.5 mW/mm[sup 2]. The absorbed dose of 7.8 [times] 10[sup 10] J/kg (7.8 [times] 10[sup 12] rd) is equivalent to 1.2 times the dose that would be absorbed by a multilayer coating on the first imaging optic in a hypothetical SXPL system during one year of operation. Surface temperature increases did not exceed 2[degrees]C during the exposure. Normal incidence reflectance measurements at [lambda][sub 0]=13.4 nm performed prior to radiation exposure were in agreement with measurements performed after the exposure, indicating that no significant damage had occurred.
- Research Organization:
- Lawrence Livermore National Lab., CA (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 6856465
- Report Number(s):
- UCRL-JC-111725; CONF-9204120--6; ON: DE93011879
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360106* -- Metals & Alloys-- Radiation Effects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
DAMAGE
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
IONIZING RADIATIONS
LAYERS
METALS
MIRRORS
MOLYBDENUM
PHYSICAL RADIATION EFFECTS
PRINTED CIRCUITS
RADIATION EFFECTS
RADIATIONS
REFLECTION
SEMIMETALS
SILICON
SOFT X RADIATION
TRANSITION ELEMENTS
X RADIATION