In situ spectroscopic ellipsometry studies of hydrogen ion bombardment of crystalline silicon

Journal Article · Fri May 01 04:00:00 EDT 1992 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586086· OSTI ID:68544

Hu, Y Z; Li, M; Conrad, K; Andres, J W; Irene, E A ^[1]; Denker, M; Ray, M; McGuire, G ^[2]

---

1. Univ. of North Carolina, Chapel Hill, NC (United States)
2. Microelectronics Center for North Carolina, Research Triangle Park, NC (United States)

Hydrogen-bombardment induced damage in single crystal silicon as a function of the substrate temperature, ion energy, and ion dose was studied using in situ spectroscopic ellipsometry over the photon energy range 2.0-5.5 eV under high vacuum conditions. The incident hydrogen ion energies were 300 and 1000 eV, and the doses were 10{sup 15}-10{sup 18} ions/cm{sup 2}. In situ spectroscopic ellipsometry results showed that the damage layer thicknesses for the samples bombarded at elevated temperatures are smaller than for samples bombarded at room temperature and subsequently annealed at the same elevated temperature. The diffusion coefficient for hydrogen in silicon of 6 x 10{sup {minus}15} cm{sup {minus}2}/s was obtained from the in situ spectroscopic ellipsometry data. 40 refs., 11 figs., 1 tab.

• OSTI ID: 68544
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 10; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
ANNEALING
ELLIPSOMETERS
HYDROGEN IONS
MONOCRYSTALS
PHYSICAL RADIATION EFFECTS
SILICON
TEMPERATURE DEPENDENCE