Near-surface microstructural modifications in low energy hydrogen ion bombarded silicon

Journal Article · Tue Jan 01 04:00:00 EST 1985 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.573201· OSTI ID:6108006

Panitz, J K.G.; Sharp, D J; Hills, C R

We have bombarded single crystal (100) and (111) silicon with a hydrogen ion beam produced by a Kaufman ion source. A range of dose rates from 0.2--2.0 mA/cm/sup 2/, bulk sample temperatures from 35/sup 0/--350/sup 0/ C, and doses of 2 x 10/sup 17/, 2 x 10/sup 18/, and 2 x 10/sup 19/ ions/cm/sup 2/ at maximum ion energies of 1600 eV was explored. Transmission electron microscopy and electron spin resonance measurements were used to characterize the bombarded samples. Extensive microstructural modifications occur as a result of hydrogen ion bombardment; the orientation, size, density, and distribution of the features which form vary as a function of crystal orientation, dose rate, bulk temperature, and total dose. Electron spin resonance studies indicate no detectable change in the number of occupied unpaired electron spin states occur in conjunction with this damage.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6108006
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 3:1; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
BEAMS
CATIONS
CHARGED PARTICLES
COLLISIONS
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
ELECTRON SPIN RESONANCE
ELEMENTS
ENERGY RANGE
HIGH TEMPERATURE
HYDROGEN IONS
HYDROGEN IONS 1 PLUS
ION BEAMS
ION COLLISIONS
IONS
KEV RANGE
KEV RANGE 01-10
MAGNETIC RESONANCE
MEDIUM TEMPERATURE
MICROSCOPY
MICROSTRUCTURE
ORIENTATION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RESONANCE
SEMIMETALS
SILICON
SIZE
TRANSMISSION ELECTRON MICROSCOPY