Variations in the refractive index of the near-surface region of low energy hydrogen ion bombarded silicon

Conference · Tue Jan 01 04:00:00 EST 1985

OSTI ID:6406435

Pettit, R B; Panitz, J K.G.

Using ellipsometric analysis, the complex index of refraction of low-energy, hydrogen ion bombarded, (100) single-crystal silicon was measured as a function of distance from the bombarded surface. The bombardment conditions were a 1600 eV hydrogen beam produced by a Kaufman ion source, 1.4 mA/cm/sup 2/ flux, 2 x 10/sup 18/ ions/cm/sup 2/ fluence and 275/sup 0/C bulk silicon temperature. These conditions are comparable to the conditions generally reported to result in a substantial increase in the electrical conductivity of polycrystalline silicon solar cell material. Results indicate that the real and imaginary parts of the refractive index of the ion bombarded surface region approach that of the unbombarded substrate at a depth of 50 nm. The refractive index of about the first 10 nm of ion bombarded material is strongly dependent on the bombardment conditions. Variations in the imaginary part of the refractive index indicate that approximately 10% of incident radiation is absorbed by the first 50 nm of modified material.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6406435
• Report Number(s): SAND-85-1177C; CONF-851217-4; ON: DE86003500
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CHARGED PARTICLES
CRYSTALS
DIRECT ENERGY CONVERTERS
ELEMENTS
ELLIPSOMETRY
ENERGY RANGE
EQUIPMENT
HYDROGEN IONS
IONS
KEV RANGE
KEV RANGE 01-10
MEASURING METHODS
MONOCRYSTALS
OPTICAL PROPERTIES
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
REFRACTIVITY
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACES