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Kinetics of accumulation of radiation defects in p-type germanium irradiated with 30 and 660 MeV protons

Journal Article · · Sov. Phys. - Semicond. (Engl. Transl.); (United States)
OSTI ID:6849482
Irradiation produced defects with a level E/sub v/+0.25 +- 0.02 eV. An investigation of the isochronous annealing established that the radiation defects were removed and the lifetime was restored in a single annealing stage 120-160/sup 0/C. It was concluded that irradiation of p-type germanium with high-energy protons produced; stable multivacancy complexes.
Research Organization:
Scientific-Research Institute of Applied Physics Problems at the V. I. Lenin Belorussian State University, Minsk
OSTI ID:
6849482
Journal Information:
Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 11:1; ISSN SPSEA
Country of Publication:
United States
Language:
English

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