Effective lifetime in n-type germanium irradiated with 660 MeV protons

Journal Article · Sat Nov 01 04:00:00 EST 1980 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6592947

Pokotilo, Y M; Tkachev, V D; Yavid, V Y

A study was made of the effects of temperature and dose on the lifetime t of the minority carriers in n-type germanium irradiated with 660 MeV protons. The value of t was found to be governed by point defects and their clusters. A solution of the equation of continuity yielded an expression for the effective lifetime indicating that the rates of recombination at point defects and clusters were additive, and that their relative contributions depended on the radiation dose. It was established that the dimensions of defect clusters depended on the concentration of the main dopant.

• Research Organization: Scientific-Research Institute of Applied Physics Problems at the V. I. Lenin Belorussian State University, Minsk, and Belorussian Polytechnic Institute, Minsk
• OSTI ID: 6592947
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 14:11; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
CARRIER LIFETIME
CATIONS
CHARGED PARTICLES
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
ENERGY RANGE
GERMANIUM
HYDROGEN IONS
HYDROGEN IONS 1 PLUS
ION COLLISIONS
IONS
LIFETIME
MATERIALS
METALS
MEV RANGE
MEV RANGE 100-1000
N-TYPE CONDUCTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RECOMBINATION
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE