RECOMBINATION LEVEL IN n-TYPE GERMANIUM IRRADIATED WITH ELECTRONS
Journal Article
·
· Soviet Phys.-Solid State (English Transl.)
OSTI ID:4752657
The temperature dependence of the lifetime of excess carriers in n-type germanium, irradiated with fast electrons from a Sr/sup 90/-Y/sup 90/ source, was used to find the position of the recombination level of radiation defects. The level lies 0.26 ev above the valence band. The cross sections for capture by a recombination center are 2 x 10/sup -16/ cm/sup 2/ for electrons and 65 x 10/sup - 16/ cm/sup 2/ for holes. Irradiation was carried out at room temperature. The position of the recombination level was not altered by annealing. (auth)
- Research Organization:
- Lebedev Inst. of Physics, Moscow
- NSA Number:
- NSA-17-013189
- OSTI ID:
- 4752657
- Journal Information:
- Soviet Phys.-Solid State (English Transl.), Journal Name: Soviet Phys.-Solid State (English Transl.) Vol. Vol: 4
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
RADIATION EFFECTS ON RECOMBINATION IN GERMANIUM
RADIATION-INDUCED RECOMBINATION CENTERS IN GERMANIUM
ELECTRON-BOMBARDMENT INDUCED RECOMBINATION CENTERS IN GERMANIUM
Journal Article
·
Sat Aug 01 00:00:00 EDT 1959
· Journal of Applied Physics (U.S.)
·
OSTI ID:4223968
RADIATION-INDUCED RECOMBINATION CENTERS IN GERMANIUM
Journal Article
·
Sun Nov 30 23:00:00 EST 1958
· Journal of Applied Physics (U.S.)
·
OSTI ID:4291716
ELECTRON-BOMBARDMENT INDUCED RECOMBINATION CENTERS IN GERMANIUM
Journal Article
·
Sat Aug 01 00:00:00 EDT 1959
· Journal of Applied Physics (U.S.)
·
OSTI ID:4238185