EFFECT OF IRRADIATION ON THE HOLE LIFETIME OF N-TYPE GERMANIUM

Journal Article · Tue Oct 01 04:00:00 EDT 1957 · Journal of Applied Physics (U.S.)

DOI:https://doi.org/10.1063/1.1722599· OSTI ID:4330936

Curtis, Jr, O L; Cleland, J W; Crawford, Jr, J H; Pigg, J C

The minority carrier lifetime of Ge is very sensitive to certain types of irradiation. The results of irradiating large single crystal samples of n- type Ge with fast neutrons and Co/sup 60/ gamma rays are presented and discussed. Lifetime was determined from a transient measurement of the decay of holes following an injection pulse. The effect of initial carrier concentration has been considered. According to the James-Lark-Horovitz model, four energy levels are introduced by irradiation into the forbidden band of Ge, one above and three below the center of the band. Using the upper level, a one level recombination model serves to explain the experimental results approximately. The determination of the recombination level agrees well with the position of the first ionization level of the interstitial produced by irradiation at about 0.2 ev below the conduction band. On this basis, the effective cross section for hole capture by these recombination centers is found to be about 4 x 10/sup -15/ cm/sup 2/ and 5 x 10/sup -16/ cm/sup 2/ for neutron and gamma-irradiated Ge, respectively. A lower level may also be responsible for the recombination process. (auth)

• Research Organization: Oak Ridge National Lab., Tenn.
• Sponsoring Organization: USDOE
• NSA Number: NSA-12-000665
• OSTI ID: 4330936
• Journal Information: Journal of Applied Physics (U.S.), Journal Name: Journal of Applied Physics (U.S.) Vol. Vol: 28; ISSN JAPIA
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

COBALT 60
CROSS SECTIONS
CRYSTALS
DECAY
DEFECTS
ENERGY
ENERGY LEVELS
FAST NEUTRONS
GAMMA RADIATION
GERMANIUM
HOLES
INJECTION
IONIZATION
LIFETIME
PHYSICS
PULSES
RADIATION EFFECTS
REGENERATION