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SIMS analysis of deuterium diffusion in hydrogenated amorphous silicon

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.90153· OSTI ID:6848717

Secondary ion mass spectroscopy (SIMS) has been used to measure the diffusion of deuterium in hydrogenated amorphous silicon. For a film deposited in a dc glow discharge in SiH/sub 4/ at a substrate temperature of 315 /sup 0/C, the diffusion data fits D (T) =1.17 x 10/sup -/2 exp(-1.53 eV/kT) cm/sup 2//s. This result implies that degradation of these films due to hydrogen out-diffusion at 100 /sup 0/C will not be significant until after more than 10/sup 4/ years.

Research Organization:
RCA Laboratories, Princeton, New Jersey 08540
OSTI ID:
6848717
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:1; ISSN APPLA
Country of Publication:
United States
Language:
English

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