SIMS analysis of deuterium diffusion in hydrogenated amorphous silicon
Journal Article
·
· Appl. Phys. Lett.; (United States)
Secondary ion mass spectroscopy (SIMS) has been used to measure the diffusion of deuterium in hydrogenated amorphous silicon. For a film deposited in a dc glow discharge in SiH/sub 4/ at a substrate temperature of 315 /sup 0/C, the diffusion data fits D (T) =1.17 x 10/sup -/2 exp(-1.53 eV/kT) cm/sup 2//s. This result implies that degradation of these films due to hydrogen out-diffusion at 100 /sup 0/C will not be significant until after more than 10/sup 4/ years.
- Research Organization:
- RCA Laboratories, Princeton, New Jersey 08540
- OSTI ID:
- 6848717
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:1; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AMORPHOUS STATE
CHEMICAL REACTIONS
CRYOGENIC FLUIDS
DEUTERIUM
DIFFUSION
ELECTRIC FIELDS
ELEMENTS
FILMS
FLUIDS
HEAT TREATMENTS
HYDROGEN
HYDROGEN ISOTOPES
HYDROGENATION
ISOTOPES
LIGHT NUCLEI
MASS SPECTROSCOPY
NONMETALS
NUCLEI
ODD-ODD NUCLEI
SEMIMETALS
SILICON
SPECTROSCOPY
STABLE ISOTOPES
360603* -- Materials-- Properties
AMORPHOUS STATE
CHEMICAL REACTIONS
CRYOGENIC FLUIDS
DEUTERIUM
DIFFUSION
ELECTRIC FIELDS
ELEMENTS
FILMS
FLUIDS
HEAT TREATMENTS
HYDROGEN
HYDROGEN ISOTOPES
HYDROGENATION
ISOTOPES
LIGHT NUCLEI
MASS SPECTROSCOPY
NONMETALS
NUCLEI
ODD-ODD NUCLEI
SEMIMETALS
SILICON
SPECTROSCOPY
STABLE ISOTOPES