Deep center luminescence (1. 02 eV) in GaAs/(GaAl)As epitaxial layers and double-heterostructure lasers

Journal Article · Sat Jul 15 00:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90273· OSTI ID:6847217

Metz, S

Various LPE GaAs/Ga/sub 1-X/Al/sub X/As layers and DH lasers of direct alloy composition (0< or =X< or approx. =0.35) have been excited by photoluminescence and current injection at 300 K, respectively. All samples emit a weak low-energy band (BIII), peaking at about 1.02 eV independent of material composition X and doping. The responsible deep-level centers therefore remain fixed energetically at 1.02 eV, relative to the (more distant) band edge, as the gap is varied. This striking feature and other characteristics support the hypothesis that BIII results from radiative recombination at defects which are very similar, if not identical, to those labeled E/sub 3/ in literature on this

• Research Organization: Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Federal Republic of Germany
• OSTI ID: 6847217
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ENERGY LEVELS
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXCITATION
JUNCTION DIODES
LASERS
LAYERS
LUMINESCENCE
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS