Control of microstructure and orientation in solution-deposited BaTiO{sub 3} and SrTiO{sub 3} thin films

Journal Article · Wed Sep 01 04:00:00 EDT 1999 · Journal of the American Ceramic Society

DOI:https://doi.org/10.1111/j.1151-2916.1999.tb02091.x· OSTI ID:684422

Schwartz, R W ^[1]; Clem, P G; Voigt, J A; Byhoff, E R; Van Stry, M; Headley, T J; Missert, N A ^[2]

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1. Clemson Univ., SC (United States). Gilbert C. Robinson Dept. of Ceramic and Materials Engineering
2. Sandia National Labs., Albuquerque, NM (United States)

Columnar and highly oriented (100) BaTiO{sub 3} and SrTiO{sub 3} thin films were prepared by a chelate-type chemical solution deposition (CSD) process by manipulation of film deposition conditions and seeded growth techniques. Randomly oriented columnar films were prepared on platinum-coated Si substrates by a multilayering process in which nucleation of the perovskite phase was restricted to the substrate or underlying layers by control of layer thickness. The columnar films displayed improvements in dielectric constant and dielectric loss compared to the fine-grain equiaxed films that typically result from CSD methods. Highly oriented BaTiO{sub 3} and SrTiO{sub 3} thin films were fabricated on LaAlO{sub 3} by a seeded growth process that appeared to follow a standard two-step growth mechanism that has been previously reported. The film transformation process involved the bulk nucleation of BaTiO{sub 3} throughout the film, followed by the consumption of this matrix by an epitaxial overgrowth process originating at the seed layer. Both BaTiO{sub 3} and PbTiO{sub 3} seed layers were effective in promoting the growth of highly oriented (100) BaTiO{sub 3} films. Based on the various processing factors that can influence thin film microstructure, the decomposition pathway involving the formation of BaCO{sub 3} and TiO{sub 2} appeared to dictate thin film microstructural evolution.

• Research Organization: Sandia National Laboratory
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 684422
• Journal Information: Journal of the American Ceramic Society, Journal Name: Journal of the American Ceramic Society Journal Issue: 9 Vol. 82; ISSN 0002-7820; ISSN JACTAW
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM OXIDES
DEPOSITION
HIGH-TC SUPERCONDUCTORS
MICROSTRUCTURE
ORIENTATION
PLATINUM
STRONTIUM OXIDES
THIN FILMS
TITANIUM OXIDES