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The relationship between the MOCVD parameters and the crystallinity, epitaxy, and domain structure of PbTiO[sub 3] films

Journal Article · · Journal of Materials Research; (United States)
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  1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439-4838 (United States)

Lead- and titanium-based oxide thin films were prepared by the metal-organic chemical vapor deposition technique (MOCVD) and the relationship between the film structures and the processing parameters, such as the ratio of Pb/Ti precursors in the gas phase, substrate materials, substrate surface orientation, and growth temperature, was systematically studied. It was found that whether a single-phase stoichiometric PbTiO[sub 3] film could be obtained depended on both the Pb/Ti precursor ratio in the gas phase and the deposition temperature. Under appropriate conditions, stoichiometric PbTiO[sub 3] films could be obtained on all the substrates including silicon, MgO, [alpha]--Al[sub 2]O[sub 3], SrTiO[sub 3], and LaAlO[sub 3]. The PbTiO[sub 3] films grown on silicon substrates were always polycrystalline, whereas epitaxial PbTiO[sub 3] films were obtainable on all the other substrates. For epitaxial PbTiO[sub 3] films, the epitaxial relationship, crystallinity, and domain structures were found to be a function of both the substrate materials and surface orientation as well as the deposition temperature. X-ray rocking curves ([omega] scan) of the (100) and (001) planes of PbTiO[sub 3] epitaxial films and PbTiO[sub 3] single crystal revealed the inherent nature of the domain structures in PbTiO[sub 3].

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
5360873
Journal Information:
Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 9:1; ISSN JMREEE; ISSN 0884-2914
Country of Publication:
United States
Language:
English