MOCVD growth and structure of PbTiO{sub 3} thin films

Conference · Sun Aug 01 04:00:00 EDT 1993

OSTI ID:10185171

Gao, Y ^[1]; Bai, G; Merkle, K L; Chang, H L.M.; Lam, D J ^[2]

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1. New Mexico Inst. of Mining and Technology, Socorro, NM (United States). Dept. of Materials Engineering
2. Argonne National Lab., IL (United States)

PbTiO{sub 3} thin films grown on (001)MgO and (110)MgO by MOCVD have been characterized by x-ray diffraction and transmission electron microscopy. The PbTiO{sub 3} films deposited on (001)MgO under the optimum conditions always show a bi-layer structure. The top layer of the films near the free surface is c-axis oriented with the orientation relationship (001)[100]PbTiO{sub 3}{parallel}(001)[100]MgO. The bottom layer of the films near the substrate is a-axis oriented with (100)[001]PbTiO{sub 3}{parallel}(001)[100]MgO. 90{degrees} domains were observed, but only in the c-axis oriented layers. The thickness of the a-axis oriented layers near the substrate decreases with decreasing the cooling rate. PbTiO{sub 3} films deposited on (110) MgO, however, are single-layer, epitaxial films with (101)[001]PbTiO{sub 3}{parallel}(110)[001]MgO.

• Research Organization: Argonne National Lab., IL (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 10185171
• Report Number(s): ANL/MSD/CP--79238; CONF-930405--39; ON: DE93040230
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601
360602
CHEMICAL VAPOR DEPOSITION
LEAD COMPOUNDS
MAGNESIUM OXIDES
PREPARATION AND MANUFACTURE
STRUCTURE AND PHASE STUDIES
SUBSTRATES
THICKNESS
THIN FILMS
TITANATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION