Epitaxial Pb(Zr{sub 0.40}Ti{sub 0.60})O{sub 3}/SrRuO{sub 3} and PbTiO{sub 3}/SrRuO{sub 3} multilayer thin films prepared by MOCVD and rf sputtering
- and others
Epitaxial SrRuO{sub 3} thin films were deposited by RF sputtering on SrTiO{sub 3} or MgO substrates for use as underlying electrodes. On these conductive substrates, epitaxial Pb(Zr{sub 0.35}Ti{sub 0.65})O{sub 3} (PZT) and PbTiO{sub 3} (PT) thin films were, deposited by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD), RBS channeling (RBS), transmission electron microscopy (TEM) and optical waveguiding were used to characterize phase, microstructure, defect structure, refractive index, and film thickness of the deposited films. The PZT and PT films were epitaxial and c-axis oriented. 90{degree} domains, interfacial misfit dislocations and dislocations and threading dislocations were the primary structural defects, and the films showed a 70% RBS channeling reduction. Hysteresis and dielectric measurements of epitaxial PZT ferroelectric capacitor structures formed using evaporated Ag or ITO glass top electrode showed: a remanent polarization of 46.2 mC/cm{sup 2}, a coercive field of 54.9 KV/cm, a dielectric constant of 410, a bipolar resistivity of {approximately}5.8 {times} 10{sup 9} {Omega}-cm at a field of 275 KV/cm, and a breakdown strength of >400 KV/cm.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-31109-ENG-38; AC04-94AL85000
- OSTI ID:
- 71582
- Report Number(s):
- ANL/MSD/CP-83373; SAND-95-1145C; CONF-941144-148; ON: DE95007146; CRN: C/ANL--9301701
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: Dec 1994
- Country of Publication:
- United States
- Language:
- English
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