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Limitations on the use of ion implantation for the study of the reactive element effect in [beta]-NiAl

Journal Article · · Journal of the Electrochemical Society; (United States)
DOI:https://doi.org/10.1149/1.2055140· OSTI ID:6841855
;  [1]
  1. Massachusetts Inst. of Technology, Cambridge, MA (United States). H.H. Uhlig Corrosion Lab.
Numerous investigations have used the ion implantation of reactive elements (RE) such as Y or Ce, to study their effect on the growth of external oxide scales on alloys. Ion implantation has, nevertheless, some specific limitations, especially in Al[sub 2]O[sub 3]-forming alloys. The most notable limitation occurs at temperatures > 1,000 C where, owing to the shallowness of implantation, any effects of the ion-implanted RE are short-lived and differ significantly from those observed for an RE alloy addition or an RE oxide dispersion. Additionally, in alumina-forming alloy systems, particularly [beta]-NiAl, implanted Y stabilizes the first-forming, metastable [theta]-Al[sub 2]O[sub 3]. The retention of the [theta]-Al[sub 2]O[sub 3] scale on Y-implanted substrates is a chemical effect of the high concentration of Y near the substrate surface and is not a result of the implantation process itself. The loss of the RE effect at high temperatures and long times for implanted alloys is related to the outward diffusion of the RE and the information of RE-rich oxides near the gas interface of the scale.
OSTI ID:
6841855
Journal Information:
Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 141:9; ISSN JESOAN; ISSN 0013-4651
Country of Publication:
United States
Language:
English