The effect of Y-ion implantation on the oxidation of {beta}-NiAl
- Max-Planck-Institut fuer Metallforschung, Stuttgart (Germany)
The influence of Y-ion implantation on the oxidation of {beta}-NiAl single crystals has been investigated using SEM, TEM, and STEM. Y ions having an energy of 70 keV were implanted with a concentration of 5 {times} 10{sup 16} ions/cm{sup 2}. The oxidation experiments were performed in air at 1223 K. Y-ion implantation resulted in a 45-nm disordered layer. Oxidation of Y-implanted {beta}-NiAl leads to the formation of a fine-grain layer, consisting of {gamma}-Al{sub 2}O{sub 3} containing Y and a {theta}-Al{sub 2}O{sub 3} layer. After further oxidation the metastable Al{sub 2}O{sub 3} transformed into {alpha}-Al{sub 2}O{sub 3}, which started at the metal-oxide interface. Y-Al-garnet (YAG) particles were observed and Y segregation to {alpha}-Al{sub 2}O{sub 3} grain boundaries has been detected.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 68074
- Journal Information:
- Oxidation of Metals, Vol. 43, Issue 1-2; Other Information: PBD: Feb 1995
- Country of Publication:
- United States
- Language:
- English
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