Dependence of luminescence decays from GaAs/electrolyte contacts on excitation power and applied bias: Examination of the modified dead layer model

Journal Article · Mon Feb 15 04:00:00 EST 1993 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.353180· OSTI ID:6837262

Kauffman, J F; Richmond, G L ^[1]

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1. Department of Chemistry and Materials Science Institute, University of Oregon, Eugene, Oregon 97403 (United States)

Photoluminescence decays from [ital n]-GaAs/Na[sub 2]S contacts following picosecond pulse excitation are presented. Decays measured at several different potentials from depletion to accumulation regimes all exhibit a strong dependence on excitation power when the photon flux is greater than 10[sup 10] photons/cm[sup 2]/pulse. Using a flux of 4[times]10[sup 12] photons/cm[sup 2] we model the potential dependence of the decays by adjusting only the value of the surface minority trapping velocity. These results are used to evaluate the applicability of the modified dead layer model in the analysis of photoluminescence intensity versus potential measurements as a means of measuring surface minority trapping velocities in photoelectrochemical cells.

• DOE Contract Number: FG06-86ER45273
• OSTI ID: 6837262
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 73:4; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

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