Power dependent effects in photoluminescence vs voltage scans of GaAs/electrolyte junctions using picosecond pulse excitation

Journal Article · Thu Jul 23 04:00:00 EDT 1992 · Journal of Physical Chemistry

DOI:https://doi.org/10.1021/j100194a050· OSTI ID:554925

Kauffman, J F; Balko, B A; Richmond, G L ^[1]

---

1. Univ. of Oregon, Eugene, OR (United States)

Photoluminescence from n-GaAs has been measured as a function of applied voltage under excitation with a picosecond laser at three excitation power levels. A large increase in the photoluminescence intensity at the flat band potential is observed as the excitation power is increased. Analysis of the data with the modified dead layer model shows that the surface minority trapping velocity decreases as the laser power is increased. The authors attribute this to a saturation of surface minority carrier traps resulting from picosecond pulse excitation and compare the results with a companion study in which surface minority trapping velocities at the flat band potential are determined from luminescence decay profiles. 8 refs., 3 figs.

• Sponsoring Organization: USDOE
• DOE Contract Number: FG06-86ER45273
• OSTI ID: 554925
• Journal Information: Journal of Physical Chemistry, Journal Name: Journal of Physical Chemistry Journal Issue: 15 Vol. 96; ISSN JPCHAX; ISSN 0022-3654
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CHARGE CARRIERS
CHARGE TRANSPORT
ELECTROLYTES
GALLIUM ARSENIDE SOLAR CELLS
PHOTOLUMINESCENCE
POWER DENSITY
SATURATION
SODIUM SULFIDES
TRAPPING