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U.S. Department of Energy
Office of Scientific and Technical Information

Development of a polysilicon process based on chemical vapor deposition: Phase 1. Third quarterly progress report, 1 April-30 June 1980

Technical Report ·
DOI:https://doi.org/10.2172/6832859· OSTI ID:6832859
The goal of this program is to demonstrate that a dichlorosilane-based reductive chemical vapor deposition (CVD) process is capable of production, at low cost, high quality polycrystalline silicon. Physical form and purity of this material will be consistent with LSA material requirements for use in the manufacture of high efficiency solar cells. The feasibility of silicon generation from dichlorosilane has been well established in the program to date. A number of runs have been conducted over a broad range of conditions in an experimental CVD reactor. Optimization of silicon production reactor behavior has been approached via an experimental design program in which system responses are correlated with reactor operating parameters. The program has been conducted in the experimental reactor by systematically varying the conditions of feed and rod temperature for the various runs. In support of the Process Development Unit (PDU), a laboratory rearranger unit has been utilized to provide information relating to kinetics of trichlorosilane redistribution, catalyst behavior, and to allow development of reliable analytical techniques. Kinetic parameters have been determined for liquid phase redistribution at 77/sup 0/C and are more favorable than originally anticipated. Activities related to the EPSDU have progressed to include an energy balance for the plant, and a material balance revised on the basis of new analytical data from gas chromographic sampling of reactor vent gases. (WHK)
Research Organization:
Hemlock Semiconductor Corp., MI (USA)
DOE Contract Number:
NAS-7-100-955533
OSTI ID:
6832859
Report Number(s):
DOE/JPL/955533-793
Country of Publication:
United States
Language:
English