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U.S. Department of Energy
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Development of a polysilicon process based on chemical vapor deposition: Phase I. Seventh quarterly progress report, 1 April-30 June 1981

Technical Report ·
DOI:https://doi.org/10.2172/6831240· OSTI ID:6831240
The goal of this program is to demonstrate that a dichlorosilane-based reductive chemical vapor deposition (CVD) process is capable of producing, at low cost, high quality polycrystalline silicon. Physical form and purity of this material will be consistent with LSA material requirements for use in the manufacture of high efficiency solar cells. Four polysilicon deposition runs were completed in an intermediate size reactor using dichlorosilane fed from 250 pound cylinders. Results from the intermediate size reactor are consistent with those obtained earlier with a small experimental reactor. Modifications of two intermediate size reactors were completed to interface with the dichlorosilane process demonstration unit (PDU). PDU construction was completed in May 1981. Start-up occurred June 1, 1981, on schedule. The PDU achieved a maximum DCS production rate of 47 pounds per hour with the 3'' diameter redistribution reactor. No catalyst degradation has been observed during three weeks of operation.
Research Organization:
Hemlock Semiconductor Corp., MI (USA)
DOE Contract Number:
NAS-7-100-955533
OSTI ID:
6831240
Report Number(s):
DOE/JPL/955533-81-7; ON: DE83000970
Country of Publication:
United States
Language:
English