Development of a polysilicon process based on chemical vapor deposition: Phase I. Seventh quarterly progress report, 1 April-30 June 1981
The goal of this program is to demonstrate that a dichlorosilane-based reductive chemical vapor deposition (CVD) process is capable of producing, at low cost, high quality polycrystalline silicon. Physical form and purity of this material will be consistent with LSA material requirements for use in the manufacture of high efficiency solar cells. Four polysilicon deposition runs were completed in an intermediate size reactor using dichlorosilane fed from 250 pound cylinders. Results from the intermediate size reactor are consistent with those obtained earlier with a small experimental reactor. Modifications of two intermediate size reactors were completed to interface with the dichlorosilane process demonstration unit (PDU). PDU construction was completed in May 1981. Start-up occurred June 1, 1981, on schedule. The PDU achieved a maximum DCS production rate of 47 pounds per hour with the 3'' diameter redistribution reactor. No catalyst degradation has been observed during three weeks of operation.
- Research Organization:
- Hemlock Semiconductor Corp., MI (USA)
- DOE Contract Number:
- NAS-7-100-955533
- OSTI ID:
- 6831240
- Report Number(s):
- DOE/JPL/955533-81-7; ON: DE83000970
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
CHEMICAL COATING
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
CHROMATOGRAPHY
CONSTRUCTION
CRYSTALS
DEPOSITION
ELEMENTS
EVALUATION
FUNCTIONAL MODELS
GAS CHROMATOGRAPHY
HYDRIDES
HYDROGEN COMPOUNDS
MODIFICATIONS
OPERATION
PERFORMANCE
POLYCRYSTALS
PROCESS DEVELOPMENT UNITS
SEMIMETALS
SEPARATION PROCESSES
SILANES
SILICON
SILICON COMPOUNDS
SURFACE COATING
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
CHEMICAL COATING
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
CHROMATOGRAPHY
CONSTRUCTION
CRYSTALS
DEPOSITION
ELEMENTS
EVALUATION
FUNCTIONAL MODELS
GAS CHROMATOGRAPHY
HYDRIDES
HYDROGEN COMPOUNDS
MODIFICATIONS
OPERATION
PERFORMANCE
POLYCRYSTALS
PROCESS DEVELOPMENT UNITS
SEMIMETALS
SEPARATION PROCESSES
SILANES
SILICON
SILICON COMPOUNDS
SURFACE COATING