Development of a polysilicon process based on chemical vapor deposition. Sixth quarterly progress report, 1 January-31 March 1981 (Phase 1)

Technical Report · Mon Jun 01 04:00:00 EDT 1981

DOI:https://doi.org/10.2172/5746839· OSTI ID:5746839

McCormick, J.; Arvidson, A.; Sawyer, D.; Plahutnik, F.

The goal of this program is to demonstrate that a dichlorosilane-based reductive chemical vapor deposition (CVD) process is capable of producing, at low cost, high quality polycrystalline silicon. Physical form and purity of this material will be consistent with LSA material requirements for use in the manufacture of high efficiency solar cells. Experimental data generated by Hazards Research Corp. indicate that the ease of ignition and explosion severity of dichlorosilane (DCS)/air mixtures is substantially attenuated if the DCS is diluted with hydrogen. DCS/hydrogen mixtures will accordingly be transported in preference to transfer or storage of pure DCS. Testing of decomposition reactor heat shields to insure that the shield provides adequate personnel protection assuming a worst case explosion was completed. Minor modifications to a production reactor heat shield provided adequate heat shield integrity. Construction of the redesigned PDU (Process Development Unit) to accommodate all safety related information is proceeding on schedule. Structural steel work is completed as is the piping and instrumentation design work. Major pieces of process equipment have been received and positioned in the support structure and all transfer piping and conduits to the PDU have been installed. Start-up is scheduled for June 1981. Construction was completed on a feed system for supplying DCS to an intermediate sized reactor. The feed system was successfully interfaced with a reactor equipped with a modified heat shield. Reactor checkout was completed and testing to establish baseline PDU operating conditions will be completed early in the second quarter of 1982. Preliminary Experimental Process System Demonstration Unit design was completed. Base case assumption was for a 220 ton/y unit which would not include a hydrogenation process.

• Research Organization: Hemlock Semiconductor Corp., MI (USA)
• DOE Contract Number: NAS-7-100-955533
• OSTI ID: 5746839
• Report Number(s): DOE/JPL/955533-81-6; ON: DE82004949
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
CHEMICAL COATING
CHEMICAL EXPLOSIONS
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DEPOSITION
DESIGN
ELEMENTS
EVALUATION
EXPLOSIONS
FUNCTIONAL MODELS
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
NONMETALS
POLYCRYSTALS
PROCESS DEVELOPMENT UNITS
SAFETY
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SURFACE COATING