Development of a polysilicon process based on chemical vapor deposition (phase 1)

Technical Report · Mon Jun 01 04:00:00 EDT 1981

OSTI ID:6814156

Mccormick, J; Arvidson, A; Sawyer, D; Plahutnik, F

A dichlorosilane-based reductive chemical vapor deposition (CVD) process demonstrated is capable of producing, at low cost, high quality polycrystalline silicon. Testing of decomposition reactor heat shields to insure that the shield provides adequate personnel protection assuming a worst case explosion was completed. Minor modifications to a production reactor heat shield provided adequate heat shield integrity. Construction of the redesigned PDU (Process Development Unit) to accommodate all safety related information proceeded on schedule. Structural steel work was completed as is the piping and instrumentation design work. Major pieces of process equipment were received and positioned in the support structure and all transfer piping and conduits to the PDU were installed. Construction was completed on a feed system for supplying DCS to an intermediate sized reactor. The feed system was successfully interfaced with a reactor equipped with a modified heat shield. Reactor checkout was completed.

• Research Organization: Jet Propulsion Lab., Pasadena, CA (USA)
• OSTI ID: 6814156
• Report Number(s): NASA-CR-163475
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
CHEMICAL COATING
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
CONSTRUCTION
CRYSTALS
DEPOSITION
ELEMENTS
FUNCTIONAL MODELS
HYDRIDES
HYDROGEN COMPOUNDS
MODIFICATIONS
POLYCRYSTALS
PROCESS DEVELOPMENT UNITS
SEMIMETALS
SHIELDING
SILANES
SILICON
SILICON COMPOUNDS
SURFACE COATING
TESTING