Development of a polysilicon process based on chemical vapor deposition. Phase 1. Second quarterly progress report, January 1-March 31, 1980

Technical Report · Thu May 01 04:00:00 EDT 1980

DOI:https://doi.org/10.2172/5416431· OSTI ID:5416431

Sharp, K.; Arvidson, A.; Plahutnik, F.; Sawyer, D.

The goal of this program is to demonstrate that a dichlorosilane-based reductive chemical vapor deposition (CVD) process is capable of producing, at low cost, high quality polycrystalline silicon. Physical form and purity of this material will be consistent with LSA material requirements for use in the manufacture of high efficiency solar cells. The feasibility of silicon generation from dichlorosilane has been well established in the preceding quarter. A number of runs have been conducted over a broad range of conditions in an experimental CVD reactor. Silicon rods of very good surface quality and up to 42 mm in diameter have been grown in predominantly dichlorosilane-fed reactor runs. Molar silicon conversion efficiencies in excess of 45% have been observed (the projected conversion was only 35%), and unprecedented values of silicon deposition rate (high) and power consumption per kg silicon produced (low) were established for the reactor. Under comparable conditions, deposition rates and conversions for dichlorosilane runs are approximately twice those for trichlorosilane runs. Of particular importance is the fact that very few reactor-related operational problems were observed during any of the dichlorosilane runs. Design of the Process Development Unit (PDU), whose function it will be to generate and purify dichlorosilane for feed to a production scale reactor, is complete, except for details of fire and spill protection. Preliminary work on the EPSDU (a 100 metric ton dichlorosilane production, purification and recovery facility) has been completed, and includes a material balance for the proposed process.

• Research Organization: Hemlock Semiconductor Corp., MI (USA)
• DOE Contract Number: NAS-7-100-955533
• OSTI ID: 5416431
• Report Number(s): DOE/JPL/955533-79-2
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DEPOSITION
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
FUNCTIONAL MODELS
HYDRIDES
HYDROGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
POLYCRYSTALS
PROCESS DEVELOPMENT UNITS
PRODUCTION
REDUCTION
RESEARCH PROGRAMS
SAFETY
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING