Epitaxial ZnS, ZnSe and ZnS-ZnSe superlattices grown on (001)GaAs by pulsed-laser ablation

Conference · Sat Oct 31 23:00:00 EST 1992

OSTI ID:6828109

McCamy, J W ^[1]; Lowndes, D H; Budai, J D; Jellison, Jr, G E ^[2]; Herman, I P; Kim, S ^[3]

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1. Tennessee Univ., Knoxville, TN (United States). Dept. of Materials Science and Engineering
2. Oak Ridge National Lab., TN (United States)
3. Columbia Univ., New York, NY (United States). Dept. of Applied Physics

Pulsed KrF (248nm) laser ablation of polycrystalline ZnS and ZnSe targets has been used to grow high quality, fully epitaxial ZnS and ZnSe thin films on (001) GaAs. Photoluminescence measurements of the ZnS thin films show strong edge emission, while ZnSe thin films show free excitonic as well as donor and acceptor peaks. By alternately ablating each target, strained layer superlattices of the form (ZnSe)[sub m]-(ZnS)[sub n] were grown with as many as 65 periods of compositional modulation. A ZnS[sub x]Se[sub 1-x] structure also was fabricated which simultaneously incorporated both continuously graded and abrupt compositional changes.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6828109
• Report Number(s): CONF-921101-37; ON: DE93005420
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ABLATION
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
COATINGS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INORGANIC PHOSPHORS
LASER-PRODUCED PLASMA
LUMINESCENCE
PHOSPHORS
PHOTOLUMINESCENCE
PLASMA
PNICTIDES
PULSES
SELENIDES
SELENIUM COMPOUNDS
SUBSTRATES
SULFIDES
SULFUR COMPOUNDS
SUPERLATTICES
ZINC COMPOUNDS
ZINC SELENIDES
ZINC SULFIDES