Growth and optical characterization of ZnMnTe grown by molecular beam epitaxy

Conference · Tue Dec 31 23:00:00 EST 1991

OSTI ID:6828062

Reno, J L; Jones, E D; Venturini, E L

We have successfully grown ZnMnTe alloys by molecular beam epitaxy using GaAs as a substrate. Bulk MnTe has the wurtzite crystal structure but the structural phase of the material was confirmed to be zinc-blende by standard [theta]-2[theta] x-ray diffraction techniques. The composition was also determined using x-ray diffraction techniques. Manganese concentration was also estimated from magnetization measurements taken as a function of temperature. Magnetoluminescence studies were performed at 1.4K on the acceptor-bound exciton in the semimagnetic semiconductor ZnMnTe alloys. As expected, the photoluminescence peak energy decreased with increasing magnetic field.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6828062
• Report Number(s): SAND-92-2542C; CONF-921101--53; ON: DE93005350
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360606 -- Other Materials-- Physical Properties-- (1992-)
CHALCOGENIDES
EPITAXY
LATTICE PARAMETERS
LUMINESCENCE
MAGNETIC FIELDS
MAGNETIZATION
MANGANESE COMPOUNDS
MANGANESE TELLURIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 0000-0013 K
TRANSITION ELEMENT COMPOUNDS
ZINC COMPOUNDS
ZINC TELLURIDES