Growth and optical characterization of ZnMnTe grown by molecular beam epitaxy
Conference
·
OSTI ID:10121395
We have successfully grown ZnMnTe alloys by molecular beam epitaxy using GaAs as a substrate. Bulk MnTe has the wurtzite crystal structure but the structural phase of the material was confirmed to be zinc-blende by standard {theta}-2{theta} x-ray diffraction techniques. The composition was also determined using x-ray diffraction techniques. Manganese concentration was also estimated from magnetization measurements taken as a function of temperature. Magnetoluminescence studies were performed at 1.4K on the acceptor-bound exciton in the semimagnetic semiconductor ZnMnTe alloys. As expected, the photoluminescence peak energy decreased with increasing magnetic field.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10121395
- Report Number(s):
- SAND--92-2542C; CONF-921101--53; ON: DE93005350
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth and optical characterization of ZnMnTe grown by molecular beam epitaxy
GaAs nanowires on Si substrates grown by a solid source molecular beam epitaxy
Growth and optical characterization of Zn sub 1-x Mn sub x Te grown by molecular beam epitaxy
Conference
·
Tue Dec 31 23:00:00 EST 1991
·
OSTI ID:6828062
GaAs nanowires on Si substrates grown by a solid source molecular beam epitaxy
Journal Article
·
Mon Jul 31 00:00:00 EDT 2006
· Applied Physics Letters
·
OSTI ID:20860654
Growth and optical characterization of Zn sub 1-x Mn sub x Te grown by molecular beam epitaxy
Conference
·
Tue Dec 31 23:00:00 EST 1991
·
OSTI ID:5470757