Carrier density dependent photoconductivity in diamond

Journal Article · Mon Aug 06 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103616· OSTI ID:6824654

Pan, L S; Kania, D R; Pianetta, P; Landen, O L ^[1]

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1. Stanford Synchrotron Radiation Laboratory, P.O. Box 4349, Bin 99, Stanford, California 94309 (USA)

Single-crystal natural diamonds have been intrinsically photoexcited using 2 ps laser pulses. Electron and hole mobilities and decay times are examined as a function of induced carrier density. Two major density dependent effects are observed. First, at high induced carrier densities, a dramatic decrease in the carrier mobility is observed. This is attributed to carrier-carrier scattering between the electrons and the holes. A model describing carrier-carrier scattering in silicon and germanium has been scaled to diamond. Second, the decay time of the electrons decreases as the initially photoexcited density increases. A simple one-level recombination model successfully explains this density dependence. The combination of these two effects results in a minimum in the measured photoconductive decay times.

• OSTI ID: 6824654
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:6; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CARBON
CARRIER DENSITY
CARRIER LIFETIME
DIAMONDS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTAL MINERALS
ELEMENTS
LIFETIME
MINERALS
NONMETALS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES