Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Atomic resolution study of the structure and interface of aluminum films deposited epitaxially on silicon by ionized cluster beam method

Journal Article · · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
DOI:https://doi.org/10.1116/1.576854· OSTI ID:6820997
; ;  [1]; ;  [2]
  1. Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606 (Japan)
  2. National Center for Electron Microscopy, Lawrence Berkeley Laboratory, University of California, Berkeley, CA (USA)
Aluminum films with unusual properties have been deposited on silicon substrates at room temperature by ionized cluster beam (ICB). As demonstrated in previous studies, these films have high thermal stability, are resistant to electromigration and provide good step coverage. The structure of the films and the interface were investigated by atomic resolution electron microscopy. In the Al(111)/Si(111) case, the interface is flat and no transition layer was observed. No interface damage due to energetic ion bombardment could be seen. By annealing at 400 {degree}C, small angle grain boundaries vanished and the film became an almost perfect single crystal. In the case of Si(100) substrates, films have Al(110) bicrystal form with curved grain boundaries separating Al(110) structures rotated 90{degree}. Again, no transition layer and no trace of ion-bombarded damage at the Al(110)/Si(100) interface could be seen. By {ital in} {ital situ} annealing during transmission electron microscopy (TEM) observation, it was found that the movement of the bicrystal grain boundaries occurs at temperatures above 500 {degree}C and a considerable number of bicrystal grains are absorbed into the neighboring bicrystal grain. Then the films become a large grain bicrystal.
DOE Contract Number:
AC03-76SF00098
OSTI ID:
6820997
Journal Information:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 8:3; ISSN JVTAD; ISSN 0734-2101
Country of Publication:
United States
Language:
English