Atomic resolution study of the structure and interface of aluminum films deposited epitaxially on silicon by ionized cluster beam method
Journal Article
·
· Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
- Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606 (Japan)
- National Center for Electron Microscopy, Lawrence Berkeley Laboratory, University of California, Berkeley, CA (USA)
Aluminum films with unusual properties have been deposited on silicon substrates at room temperature by ionized cluster beam (ICB). As demonstrated in previous studies, these films have high thermal stability, are resistant to electromigration and provide good step coverage. The structure of the films and the interface were investigated by atomic resolution electron microscopy. In the Al(111)/Si(111) case, the interface is flat and no transition layer was observed. No interface damage due to energetic ion bombardment could be seen. By annealing at 400 {degree}C, small angle grain boundaries vanished and the film became an almost perfect single crystal. In the case of Si(100) substrates, films have Al(110) bicrystal form with curved grain boundaries separating Al(110) structures rotated 90{degree}. Again, no transition layer and no trace of ion-bombarded damage at the Al(110)/Si(100) interface could be seen. By {ital in} {ital situ} annealing during transmission electron microscopy (TEM) observation, it was found that the movement of the bicrystal grain boundaries occurs at temperatures above 500 {degree}C and a considerable number of bicrystal grains are absorbed into the neighboring bicrystal grain. Then the films become a large grain bicrystal.
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6820997
- Journal Information:
- Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 8:3; ISSN JVTAD; ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
ALUMINIUM
ANNEALING
BEAMS
CRYSTAL STRUCTURE
DEPOSITION
ELECTRON MICROSCOPY
ELEMENTS
ENERGY BEAM DEPOSITION
GRAIN BOUNDARIES
HEAT TREATMENTS
ION BEAMS
METALS
MICROSCOPY
MICROSTRUCTURE
SEMIMETALS
SILICON
STABILITY
SUBSTRATES
SURFACE COATING
360104* -- Metals & Alloys-- Physical Properties
ALUMINIUM
ANNEALING
BEAMS
CRYSTAL STRUCTURE
DEPOSITION
ELECTRON MICROSCOPY
ELEMENTS
ENERGY BEAM DEPOSITION
GRAIN BOUNDARIES
HEAT TREATMENTS
ION BEAMS
METALS
MICROSCOPY
MICROSTRUCTURE
SEMIMETALS
SILICON
STABILITY
SUBSTRATES
SURFACE COATING