Initial interaction of crystalline Al/Amorphous Si bilayer during annealing
- Yonghao
- Jiangyong
Initial interaction of a magnetron sputter deposited Al(100 nm, {l_brace}111{r_brace} fiber textured)/Si(150 nm, amorphous) bilayer, induced by isothermally annealing at 250 C for 60 min in a vacuum of 2.0 x 10{sup -4} Pa, was studied by X-ray diffraction, Auger electron microscopy and focused-ion beam imaging techniques. Upon annealing, the crystalline Si had grown into the grain boundaries of the Al layer with a {l_brace}111{r_brace} texture, a crystallite size of approximate 12 nm and a tensile stress of +138 MPa. Simultaneously, the Al grains had grown into the Si layer from the original interface of the a-Si and Al sublayers with the lateral grain growth. The stress parallel to the surface of the Al layer had changed from +27 MPa to +232 MPa after annealing.
- Research Organization:
- Los Alamos National Laboratory
- Sponsoring Organization:
- DOE
- OSTI ID:
- 977550
- Report Number(s):
- LA-UR-04-2556
- Country of Publication:
- United States
- Language:
- English
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