Plasma etched polycrystalline hot-filament chemical vapor deposited diamond thin films and their electrical characteristics

Journal Article · Mon Nov 28 04:00:00 EST 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.112578· OSTI ID:6820272

Liaw, B Y; Stacy, T; Zhao, G; Charlson, E J; Charlson, E M; Meese, J M; Prelas, M A ^[1]

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1. College of Engineering, University of Missouri, Columbia, Missouri 65211 (United States)

Etching of hot-filament, chemical vapor deposited, diamond thin films utilizing low energy ion irradiation was investigated. The films used in this study were boron doped polycrystalline diamond, deposited on [ital p]-type (100) oriented silicon substrates. A low voltage dc corona discharge with an oxygen plasma was used to sputter etch the films. Surfaces were investigated by scanning electron microscopy and profilometry. Etch rates were approximately 500 A/min, depending on the various processing conditions. Characteristics of In/diamond/Si Schottky diodes were used to evaluate the electrical properties of diamond surfaces with various treatments. Results indicate that plasma etching can significantly affect Schottky device characteristic.

• DOE Contract Number: FG02-91ER12107
• OSTI ID: 6820272
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:22; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
665300 -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARBON
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CORONA DISCHARGES
DAMAGE
DEPOSITION
DIAMONDS
ELECTRIC DISCHARGES
ELECTRICAL PROPERTIES
ELEMENTAL MINERALS
ELEMENTS
ETCHING
MINERALS
NONMETALS
PHYSICAL PROPERTIES
PLASMA
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPUTTERING
SURFACE COATING
SURFACE FINISHING
SURFACE PROPERTIES