Growth of diamond films on boron nitride thin films by bias-assisted hot filament chemical vapor deposition
- Departament de Fisica Aplicada i Electronica, Universitat de Barcelona, E-08028 Barcelona (Spain)
We report the growth of continuous diamond thin films by bias-assisted hot filament chemical vapor deposition onto hexagonal boron nitride films prepared by plasma chemical vapor deposition on silicon substrates. Negative substrate biasing during the early stages of diamond growth greatly increased the nucleation density. Values of 10{sup 10}cm{sup {minus}2} were achieved at {minus}250 V for bias times as short as 25 min. After the nucleation stage, high quality polycrystalline continuous diamond films, as revealed by scanning electron microscopy and Raman analysis, were grown under standard hot filament deposition conditions. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 526483
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 70; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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