Subpicosecond cooling of photoexcited hot carriers studied by one-beam excite-and-probe Raman scattering

Journal Article · Mon May 28 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102969· OSTI ID:6817165

Kim, D; Yu, P Y ^[1]

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1. Department of Physics, University of California, Berkeley, California 94720 (USA) Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA (USA)

A technique using a single picosecond laser beam to excite and probe photoexcited hot electron and hole plasma by inelastic light scattering is proposed. The cooling rate of the hot electrons is determined by varying the {ital pulse} {ital width} of the laser beam. The technique is illustrated by measuring the subpicosecond cooling of hot carriers in GaAs and InGaAs. The advantages and limitations of the technique are discussed.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6817165
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:22; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
CHARGE CARRIERS
ELECTROMAGNETIC RADIATION
ELECTRON-HOLE DROPLETS
EXCITONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASER RADIATION
LIFETIME
LIGHT SCATTERING
PLASMA
PNICTIDES
QUASI PARTICLES
RADIATIONS
RAMAN EFFECT
SCATTERING
SOLID-STATE PLASMA