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U.S. Department of Energy
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Study of hot carrier relaxation in quantum wells by subpicosecond Raman scattering

Conference ·
OSTI ID:6639332
Relaxation of hot carriers excited by subpicosecond laser pulses has been studied by Raman scattering in GaAs/AlAs multiple quantum wells with well widths varying between 100 and 1000 {Angstrom}. The hot phonon population observed by Raman scattering is found to decrease with the well width despite the fact that the hot electron temperature remains constant. The results are explained in terms of confinement of both electrons and optical phonons in quantum wells.
Research Organization:
Lawrence Berkeley Lab., CA (USA)
Sponsoring Organization:
DOE/ER
DOE Contract Number:
AC03-76SF00098
OSTI ID:
6639332
Report Number(s):
LBL-29175; CONF-9003189--1; ON: DE90015635
Country of Publication:
United States
Language:
English