Study of hot carrier relaxation in quantum wells by subpicosecond Raman scattering
Conference
·
OSTI ID:6639332
Relaxation of hot carriers excited by subpicosecond laser pulses has been studied by Raman scattering in GaAs/AlAs multiple quantum wells with well widths varying between 100 and 1000 {Angstrom}. The hot phonon population observed by Raman scattering is found to decrease with the well width despite the fact that the hot electron temperature remains constant. The results are explained in terms of confinement of both electrons and optical phonons in quantum wells.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA)
- Sponsoring Organization:
- DOE/ER
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6639332
- Report Number(s):
- LBL-29175; CONF-9003189--1; ON: DE90015635
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
BAND THEORY
CHARGE CARRIERS
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELECTRON TEMPERATURE
ENERGY GAP
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER RADIATION
MATERIALS
MICROSTRUCTURE
PHONONS
PNICTIDES
PROBES
QUASI PARTICLES
RADIATIONS
RAMAN EFFECT
RELAXATION
SCATTERING
SEMICONDUCTOR MATERIALS
360603 -- Materials-- Properties
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
BAND THEORY
CHARGE CARRIERS
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELECTRON TEMPERATURE
ENERGY GAP
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER RADIATION
MATERIALS
MICROSTRUCTURE
PHONONS
PNICTIDES
PROBES
QUASI PARTICLES
RADIATIONS
RAMAN EFFECT
RELAXATION
SCATTERING
SEMICONDUCTOR MATERIALS